Discrete Semiconductor Products

VS-40HFL60S02

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DIODE GEN PURP 600V 40A DO203AB

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Discrete Semiconductor Products

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DIODE GEN PURP 600V 40A DO203AB

Technical Specifications

Parameters and characteristics for this part

Specification	VS-40HFL60S02

Current - Average Rectified (Io)	40 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	DO-203AB, DO-5, Stud
Reverse Recovery Time (trr)	200 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-5
Supplier Device Package	DO-203AB
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.95 V

Part	Voltage - Forward (Vf) (Max) @ If	Speed	Supplier Device Package	Supplier Device Package	Technology	Reverse Recovery Time (trr)	Package / Case	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Vishay General Semiconductor - Diodes Division VS-40HFL60S05	1.95 V	200 mA 500 ns	DO-5	DO-203AB	Standard	500 ns	DO-203AB DO-5 Stud	100 µA	40 A	600 V	Chassis Stud Mount	125 °C	-40 °C
Vishay General Semiconductor - Diodes Division VS-40HFL60S02	1.95 V	200 mA 500 ns	DO-5	DO-203AB	Standard	200 ns	DO-203AB DO-5 Stud	100 µA	40 A	600 V	Chassis Stud Mount	125 °C	-40 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 40A Chassis, Stud Mount DO-203AB (DO-5)

Technical documentation and resources