Discrete Semiconductor Products

PH4830L,115

Obsolete

MOSFET N-CH 30V 84A LFPAK56

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 84A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	PH4830L,115

Current - Continuous Drain (Id) (Tc)	84 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	22.9 nC
Input Capacitance (Ciss) (Max)	2786 pF, 2786 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-669, SC-100
Package Name	LFPAK56, Power-SO8
Power Dissipation (Max)	62.5 W
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.15 V

Part	Technology	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Package / Case	Package Name	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	FET Type
NXP USA Inc. PH4830L,115	MOSFET (Metal Oxide)	20 V	84 A	SC-100 SOT-669	LFPAK56 Power-SO8	Surface Mount	-55 °C	150 °C	2.15 V	62.5 W	30 V	10 V	4.5 V	2786 pF 2786 pF	22.9 nC	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.69	1m+

3D models and CAD resources for this part

General part information

N-Channel 30 V 84A (Tc) 62.5W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources