
Discrete Semiconductor Products
FDH3632
ActiveON Semiconductor
POWER MOSFET, N CHANNEL, 100 V, 80 A, 0.0075 OHM, TO-247, THROUGH HOLE
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Discrete Semiconductor Products
FDH3632
ActiveON Semiconductor
POWER MOSFET, N CHANNEL, 100 V, 80 A, 0.0075 OHM, TO-247, THROUGH HOLE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FDH3632 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 80 A, 12 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 110 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) [Max] | 310 W |
| Rds On (Max) @ Id, Vgs | 9 mOhm |
| Supplier Device Package | TO-247-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 5.71 | |
| 10 | $ 3.82 | |||
| 100 | $ 2.75 | |||
| 500 | $ 2.29 | |||
| 1000 | $ 2.26 | |||
| Newark | Each | 250 | $ 2.86 | |
| ON Semiconductor | N/A | 1 | $ 2.41 | |
Description
General part information
FDH3632 Series
N-Channel PowerTrench®MOSFET 100V, 80A, 9mΩ
Documents
Technical documentation and resources