Discrete Semiconductor Products

S4D05120E

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DIODE SIL CARBIDE 1.2KV 5A DPAK

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Discrete Semiconductor Products

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DIODE SIL CARBIDE 1.2KV 5A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	S4D05120E

Capacitance @ Vr, F	302 pF
Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	20 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	DPAK
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	5 A, 1.8 V

Part	Mounting Type	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Voltage - Forward (Vf) (Max) @ If	Speed	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr
SMC Diode Solutions S4D05120A	Through Hole	302 pF	1.2 kV	SiC (Silicon Carbide) Schottky	TO-220AC (TO-220-2)	175 ░C	-55 °C	TO-220-2	1.8 V 5 A	500 mA	5 A	20 µA
SMC Diode Solutions S4D05120E	Surface Mount	302 pF	1.2 kV	SiC (Silicon Carbide) Schottky	DPAK	175 ░C	-55 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.8 V 5 A	500 mA	5 A	20 µA
SMC Diode Solutions S4D05120G	Surface Mount	302 pF	1.2 kV	SiC (Silicon Carbide) Schottky	D2PAK	175 ░C	-55 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1.8 V 5 A	500 mA	5 A	20 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 5A Surface Mount DPAK

Technical documentation and resources