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INTEGRATED SILICON SOLUTION / ISSI IS42VM16160K-75BLI
Integrated Circuits (ICs)

IS43QR16256B-083RBLI

Active
ISSI, Integrated Silicon Solution Inc

DRAM, DDR4, 4 GBIT, 256M X 16BIT, 1.2 GHZ, FBGA, 96 PINS

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INTEGRATED SILICON SOLUTION / ISSI IS42VM16160K-75BLI
Integrated Circuits (ICs)

IS43QR16256B-083RBLI

Active
ISSI, Integrated Silicon Solution Inc

DRAM, DDR4, 4 GBIT, 256M X 16BIT, 1.2 GHZ, FBGA, 96 PINS

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIS43QR16256B-083RBLI
Clock Frequency1.2 GHz
Memory FormatDRAM
Memory InterfaceParallel
Memory Organization256 M
Memory Size512 kb
Memory TypeVolatile
Mounting TypeSurface Mount
Operating Temperature [Max]95 °C
Operating Temperature [Min]-40 °C
Package / Case96-BGA
Supplier Device Package96-BGA
TechnologySDRAM - DDR4
Write Cycle Time - Word, Page15 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 1$ 12.01
10$ 11.12
25$ 10.87
40$ 10.81
198$ 9.52
396$ 9.05
594$ 8.96
990$ 8.66

Description

General part information

IS43QR16256 Series

IS43QR16256B-083RBLI 256Mx16 DDR4 SDRAM is a high-speed dynamic random-access memory internally organized with eight banks (2 bank groups each with 4 banks). The DDR4 SDRAM uses a 8n prefetch architecture to achieve high-speed operation. The 8n prefetch architecture is combined with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write operation for the DDR4 SDRAM consists of a single 8n-bit wide, four-clock data transfer at the internal DRAM core and eight corresponding n-bit wide, one-half clock cycle data transfers at the I/O pins. Read and write operations to the DDR4 SDRAM are burst-oriented, start at a selected location, and continue for a burst length of eight or a ‘chopped’ burst of four in a programmed sequence.

Documents

Technical documentation and resources