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TO-263
Discrete Semiconductor Products

FGB30N6S2T

Obsolete
ON Semiconductor

IGBT 600V 45A 167W TO263AB

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DocumentsDatasheet
TO-263
Discrete Semiconductor Products

FGB30N6S2T

Obsolete
ON Semiconductor

IGBT 600V 45A 167W TO263AB

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationFGB30N6S2T
Current - Collector (Ic) (Max) [Max]45 A
Current - Collector Pulsed (Icm)108 A
Gate Charge23 nC
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power - Max [Max]167 W
Supplier Device PackageTO-263 (D2PAK)
Switching Energy110 µJ, 55 µJ
Td (on/off) @ 25°C6 ns, 40 ns
Test Condition12 A, 15 V, 390 V, 10 Ohm
Vce(on) (Max) @ Vge, Ic2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

FGB3 Series

IGBT 600 V 45 A 167 W Surface Mount TO-263 (D2PAK)

Documents

Technical documentation and resources