SQJ200EP-T1_GE3

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MOSFET 2N-CH 20V 20A PPAK SO8

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Discrete Semiconductor Products

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MOSFET 2N-CH 20V 20A PPAK SO8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJ200EP-T1_GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C [Max]	60 A
Current - Continuous Drain (Id) @ 25°C [Min]	20 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs [Max]	18 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	975 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8 Dual
Power - Max [Max]	48 W
Power - Max [Min]	27 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	8.8 mOhm
Supplier Device Package	PowerPAK® SO-8 Dual Asymmetric
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2 V

Part	Current - Continuous Drain (Id) @ 25°C [Min]	Current - Continuous Drain (Id) @ 25°C [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Qualification	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Rds On (Max) @ Id, Vgs	Mounting Type	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Technology	Package / Case	Power - Max [Min]	Power - Max [Max]	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SQJ200EP-T1_GE3	20 A	60 A	975 pF	PowerPAK® SO-8 Dual Asymmetric	AEC-Q101	-55 °C	175 ░C	2 N-Channel (Dual)	8.8 mOhm	Surface Mount	Automotive	18 nC	2 V	MOSFET (Metal Oxide)	PowerPAK® SO-8 Dual	27 W	48 W	20 V

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General part information

Mosfet Array 20V 20A, 60A 27W, 48W Surface Mount PowerPAK® SO-8 Dual Asymmetric

Technical documentation and resources