Discrete Semiconductor Products

IRLR230ATM

Obsolete

MOSFET N-CH 200V 7.5A DPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 200V 7.5A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	IRLR230ATM

Current - Continuous Drain (Id) @ 25°C	7.5 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	27 nC
Input Capacitance (Ciss) (Max) @ Vds	755 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	2.5 W, 48 W
Rds On (Max) @ Id, Vgs	400 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Technology	Package / Case	Supplier Device Package	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs(th) (Max) @ Id	Mounting Type
ON Semiconductor IRLR230ATF	27 nC	-55 °C	150 °C	755 pF	200 V	5 V	400 mOhm	2.5 W 48 W	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252AA	20 V	7.5 A	N-Channel	2 V	Surface Mount
ON Semiconductor IRLR230ATM	27 nC	-55 °C	150 °C	755 pF	200 V	5 V	400 mOhm	2.5 W 48 W	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252AA	20 V	7.5 A	N-Channel	2 V	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 7.5A (Tc) 2.5W (Ta), 48W (Tc) Surface Mount TO-252AA

Technical documentation and resources