Zenode.ai Logo
Beta
8-DFN 3x3
Integrated Circuits (ICs)

ADP3110AKCPZ-RL

Active
ON Semiconductor

IC,DUAL MOSFET DRIVER,LLCC,8PIN,PLASTIC ROHS COMPLIANT: YES

Deep-Dive with AI

Search across all available documentation for this part.

8-DFN 3x3
Integrated Circuits (ICs)

ADP3110AKCPZ-RL

Active
ON Semiconductor

IC,DUAL MOSFET DRIVER,LLCC,8PIN,PLASTIC ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationADP3110AKCPZ-RL
Channel TypeSynchronous
Driven ConfigurationHalf-Bridge
Gate TypeN-Channel MOSFET
High Side Voltage - Max (Bootstrap) [Max]35 V
Input TypeNon-Inverting, Inverting
Logic Voltage - VIL, VIH0.8 V, 2 V
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature [Max]150 °C
Operating Temperature [Min]0 °C
Package / Case8-VFDFN Exposed Pad
Rise / Fall Time (Typ) [custom]11 ns
Rise / Fall Time (Typ) [custom]20 ns
Supplier Device Package8-DFN (3x3)
Voltage - Supply [Max]13.2 V
Voltage - Supply [Min]4.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.32
10$ 0.79
25$ 0.66
100$ 0.52
250$ 0.45
500$ 0.41
1000$ 0.38
Digi-Reel® 1$ 1.32
10$ 0.79
25$ 0.66
100$ 0.52
250$ 0.45
500$ 0.41
1000$ 0.38
Tape & Reel (TR) 3000$ 0.33
6000$ 0.31
9000$ 0.30
15000$ 0.29
21000$ 0.28
NewarkEach (Supplied on Full Reel) 3000$ 0.38
6000$ 0.35
12000$ 0.33
18000$ 0.31
30000$ 0.29
ON SemiconductorN/A 1$ 0.30

Description

General part information

ADP3110A Series

The ADP3110A is a dual, high voltage MOSFET driver optimized for driving two N-channel MOSFETs, the two switches in a nonisolated synchronous buck power converter. Each driver is capable of driving a 3000 pF load with a 25 ns propagation delay and a 30 ns transition time. One of the drivers can be bootstrapped and is designed to handle the high voltage slew rate associated with floating high-side gate drivers. The ADP3110A includes overlapping drive protection to prevent shoot-through current in the external MOSFETs.