Discrete Semiconductor Products

2SK3481-AZ

Obsolete

MOSFET N-CH 100V 30A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 30A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	2SK3481-AZ

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	48 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2300 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	56 W, 1.5 W
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Power MOSFETs for Automotive

Part	Technology	Rds On (Max) @ Id, Vgs	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Current - Continuous Drain (Id) @ 25°C	FET Type	Supplier Device Package
Renesas Electronics Corporation 2SK3481-AZ	MOSFET (Metal Oxide)	50 mOhm	150 °C	2300 pF	48 nC	1.5 W 56 W	20 V	100 V	Through Hole	4.5 V 10 V	TO-220-3	30 A	N-Channel	TO-220AB

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Nch Single Power MOSFET 100V 30A 50mohm MP-25/TO-220AB Automotive

Technical documentation and resources