Discrete Semiconductor Products

UF1M

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Taiwan Semiconductor Corporation

75NS, 1A, 1000V, HIGH EFFICIENT RECOVERY RECTIFIER

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Discrete Semiconductor Products

Active

Taiwan Semiconductor Corporation

75NS, 1A, 1000V, HIGH EFFICIENT RECOVERY RECTIFIER

Technical Specifications

Parameters and characteristics for this part

Specification	UF1M

Capacitance @ Vr, F	17 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-204AL, DO-41, Axial
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-204AL (DO-41)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Package / Case	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Technology	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Speed	Mounting Type
Taiwan Semiconductor Corporation UF1M	1.7 V	DO-204AL (DO-41)	Axial DO-204AL DO-41	5 µA	17 pF	Standard	1 A	150 °C	-55 °C	1000 V	75 ns	200 mA 500 ns	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1000 V 1A Through Hole DO-204AL (DO-41)

Technical documentation and resources