Discrete Semiconductor Products

BC108B PBFREE

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TRANS GP BJT NPN 20V 0.2A 600MW 3-PIN TO-18

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Discrete Semiconductor Products

Active

TRANS GP BJT NPN 20V 0.2A 600MW 3-PIN TO-18

Technical Specifications

Parameters and characteristics for this part

Specification	BC108B PBFREE

Current - Collector (Ic) (Max) [Max]	200 mA
Current - Collector Cutoff (Max) [Max]	15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	150 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	200 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-206AA, TO-18-3 Metal Can
Power - Max [Max]	0.6 W
Supplier Device Package	TO-18
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	600 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	25 V

Part	Frequency - Transition	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Package / Case	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]
Central Semiconductor Corp BC108B PBFREE	150 MHz	0.6 W	600 mV	Through Hole	TO-18	200 °C	-65 °C	NPN	200	15 nA	TO-18-3 Metal Can TO-206AA	200 mA	25 V

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General part information

Bipolar (BJT) Transistor NPN 25 V 200 mA 150MHz 600 mW Through Hole TO-18

Technical documentation and resources