Discrete Semiconductor Products

NDBA100N10BT4H

Obsolete

MOSFET N-CH 100V 100A D2PAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 100A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	NDBA100N10BT4H

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	15 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35 nC
Input Capacitance (Ciss) (Max) @ Vds	2950 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	110 W
Rds On (Max) @ Id, Vgs	6.9 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Operating Temperature	Package / Case	Mounting Type
ON Semiconductor NDBA100N10BT4H	MOSFET (Metal Oxide)	35 nC	100 V	110 W	6.9 mOhm	N-Channel	100 A	20 V	2950 pF	10 V 15 V	TO-263 (D2PAK)	175 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 100A (Ta) 110W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources