Discrete Semiconductor Products

UJ3D1202TS

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DIODE SIL CARB 1.2KV 2A TO220-2

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Discrete Semiconductor Products

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DIODE SIL CARB 1.2KV 2A TO220-2

Technical Specifications

Parameters and characteristics for this part

Specification	UJ3D1202TS

Capacitance @ Vr, F	109 pF
Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	22 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-220-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	5 A
Voltage - Forward (Vf) (Max) @ If [Max]	1.6 V

Part	Package / Case	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Current - Average Rectified (Io)	Technology	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Speed	Current - Reverse Leakage @ Vr
Qorvo UJ3D1202TS	TO-220-2	109 pF	1.2 kV	Through Hole	2 A	SiC (Silicon Carbide) Schottky	TO-220-2	175 ░C	-55 °C	1.6 V	5 A	0 ns	500 mA	22 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 2A Through Hole TO-220-2

Technical documentation and resources

No documents available