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onsemi-FFSD0865B-F085 Rectifiers Diode Schottky SiC 650V 11.6A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
Discrete Semiconductor Products

FFSD0865B-F085

Active
ON Semiconductor

SILICON CARBIDE SCHOTTKY DIODE, ELITESIC SERIES, SINGLE, 650 V, 8 A, 22 NC, TO-252 (DPAK)

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsProduct Change Notice ENPackage Drawing-369AS-DPAK3 6.10x6.54x2.29, 4.57P+1
onsemi-FFSD0865B-F085 Rectifiers Diode Schottky SiC 650V 11.6A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
Discrete Semiconductor Products

FFSD0865B-F085

Active
ON Semiconductor

SILICON CARBIDE SCHOTTKY DIODE, ELITESIC SERIES, SINGLE, 650 V, 8 A, 22 NC, TO-252 (DPAK)

Deep-Dive with AI

DocumentsProduct Change Notice ENPackage Drawing-369AS-DPAK3 6.10x6.54x2.29, 4.57P+1

Technical Specifications

Parameters and characteristics for this part

SpecificationFFSD0865B-F085
Capacitance @ Vr, F336 pF
Current - Average Rectified (Io)11.6 A
Current - Reverse Leakage @ Vr40 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-55 C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Reverse Recovery Time (trr)0 ns
SpeedNo Recovery Time
Supplier Device PackageTO-252 (DPAK)
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]650 V
Voltage - Forward (Vf) (Max) @ If1.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.58
10$ 1.69
100$ 1.20
Digi-Reel® 1$ 2.58
10$ 1.69
100$ 1.20
Tape & Reel (TR) 2500$ 1.20
NewarkEach (Supplied on Cut Tape) 1$ 2.92
10$ 2.30
25$ 2.11
50$ 1.94
100$ 1.75
250$ 1.67
500$ 1.57
1000$ 1.53
ON SemiconductorN/A 1$ 1.13

Description

General part information

FFSD0865B-F085 Series

EliteSiC Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.