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RN2901 - Bipolar Transistors, PNP x 2 Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/4.7 kΩ, SOT-363(US6)
Discrete Semiconductor Products

RN1906,LF

Obsolete
Toshiba Semiconductor and Storage

BIPOLAR TRANSISTORS, NPN X 2 BIAS RESISTOR BUILT-IN TRANSISTORS (BRT), 4.7 KΩ/47 KΩ, SOT-363(US6)

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Search across all available documentation for this part.

DocumentsBasics of Bias Resistor Built-in Transistors (BRT)Electrical Characteristics of Bias Resistor Built-In Transistors (BRTs)+6
RN2901 - Bipolar Transistors, PNP x 2 Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/4.7 kΩ, SOT-363(US6)
Discrete Semiconductor Products

RN1906,LF

Obsolete
Toshiba Semiconductor and Storage

BIPOLAR TRANSISTORS, NPN X 2 BIAS RESISTOR BUILT-IN TRANSISTORS (BRT), 4.7 KΩ/47 KΩ, SOT-363(US6)

Deep-Dive with AI

DocumentsBasics of Bias Resistor Built-in Transistors (BRT)Electrical Characteristics of Bias Resistor Built-In Transistors (BRTs)+6

Technical Specifications

Parameters and characteristics for this part

SpecificationRN1906,LF
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]80
Frequency - Transition250 MHz
Mounting TypeSurface Mount
Package / CaseSOT-363, SC-88, 6-TSSOP
Power - Max [Max]200 mW
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)47 kOhms
Supplier Device PackageUS6
Transistor Type2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

RN1906 Series

Bipolar Transistors, NPN x 2 Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/47 kΩ, SOT-363(US6)