Discrete Semiconductor Products

UPA2702TP-E2-AZ

Obsolete

SWITCHING N-CHANNEL POWER MOSFET

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

SWITCHING N-CHANNEL POWER MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	UPA2702TP-E2-AZ

Current - Continuous Drain (Id) @ 25°C	14 A, 35 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9 nC
Input Capacitance (Ciss) (Max) @ Vds	900 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerSOIC (0.173", 4.40mm Width)
Power Dissipation (Max)	3 W, 22 W
Rds On (Max) @ Id, Vgs	9.5 mOhm
Supplier Device Package	8-HSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Switching N-Channel Power MOSFET

Part	Power Dissipation (Max)	Package / Case	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	FET Type	Supplier Device Package	Technology
Renesas Electronics Corporation UPA2702TP-E2-AZ	3 W 22 W	8-PowerSOIC (0.173" 4.40mm Width)	2.5 V	900 pF	30 V	150 °C	4 V	10 V	9 nC	20 V	9.5 mOhm	14 A 35 A	Surface Mount	N-Channel	8-HSOP	MOSFET (Metal Oxide)
Renesas Electronics Corporation UPA2702TP-E1-AZ

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	5000	$ 1.99

General part information

The UPA2702TP is a Switching N-Channel Power MOSFET.

Technical documentation and resources