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onsemi-FMMT449 GP BJT Trans GP BJT NPN 30V 1A 500mW 3-Pin SOT-23 T/R
Discrete Semiconductor Products

FMMT449

Obsolete
ON Semiconductor

TRANS GP BJT NPN 30V 1A 500MW 3-PIN SOT-23 T/R

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onsemi-FMMT449 GP BJT Trans GP BJT NPN 30V 1A 500mW 3-Pin SOT-23 T/R
Discrete Semiconductor Products

FMMT449

Obsolete
ON Semiconductor

TRANS GP BJT NPN 30V 1A 500MW 3-PIN SOT-23 T/R

Technical Specifications

Parameters and characteristics for this part

SpecificationFMMT449
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
Frequency - Transition150 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]500 mW
Supplier Device PackageSOT-23-3
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1 V
Voltage - Collector Emitter Breakdown (Max) [Max]30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

FMMT449 Series

These devices are designed with high current gain and low saturation voltage with collector currents up to 2 A continuous. Sourced from Process NB.