Discrete Semiconductor Products

MUR480ESG

Obsolete

DIODE GEN PURP 800V 4A AXIAL

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 800V 4A AXIAL

Technical Specifications

Parameters and characteristics for this part

Specification	MUR480ESG

Current - Average Rectified (Io)	4 A
Current - Reverse Leakage @ Vr	25 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Radial Bend, Axial
Speed	200 mA, 500 ns
Supplier Device Package	Axial
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.85 V

Part	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Supplier Device Package	Package / Case	Speed	Mounting Type	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
ON Semiconductor MUR480ESG	4 A	1.85 V	800 V	Standard	Axial	Axial Radial Bend	200 mA 500 ns	Through Hole	25 µA	175 ░C	-65 C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 800 V 4A Through Hole Axial

Technical documentation and resources