Discrete Semiconductor Products

BY268TR

Active

DIODE GEN PURP 1.4KV 800MA SOD57

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

DIODE GEN PURP 1.4KV 800MA SOD57

Technical Specifications

Parameters and characteristics for this part

Specification	BY268TR

Current - Average Rectified (Io)	800 mA
Current - Reverse Leakage @ Vr	2 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SOD-57, Axial
Reverse Recovery Time (trr)	400 ns
Speed	200 mA, 500 ns
Supplier Device Package	SOD-57
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1400 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.25 V

Part	Package / Case	Reverse Recovery Time (trr)	Mounting Type	Voltage - Forward (Vf) (Max) @ If [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Speed	Supplier Device Package	Technology	Current - Average Rectified (Io)
Vishay General Semiconductor - Diodes Division BY268TR	Axial SOD-57	400 ns	Through Hole	1.25 V	150 °C	-55 °C	1400 V	2 µA	200 mA 500 ns	SOD-57	Standard	800 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1400 V 800mA Through Hole SOD-57

Technical documentation and resources