Discrete Semiconductor Products

VS-ENQ030L120S

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IGBT MOD 1200V 61A EMIPAK-1B

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Discrete Semiconductor Products

Active

IGBT MOD 1200V 61A EMIPAK-1B

Technical Specifications

Parameters and characteristics for this part

Specification	VS-ENQ030L120S

Configuration	Three Level Inverter
Current - Collector (Ic) (Max) [Max]	61 A
Current - Collector Cutoff (Max) [Max]	230 µA
IGBT Type	Trench
Input	Standard
Input Capacitance (Cies) @ Vce	3.34 nF
Mounting Type	Chassis Mount
NTC Thermistor	True
Operating Temperature	150 °C
Package / Case	EMIPAK-1B
Power - Max [Max]	216 W
Supplier Device Package	EMIPAK-1B
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Power - Max [Max]	Input	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Mounting Type	Current - Collector Cutoff (Max) [Max]	Input Capacitance (Cies) @ Vce	Configuration	IGBT Type	Operating Temperature	NTC Thermistor
Vishay General Semiconductor - Diodes Division VS-ENQ030L120S	216 W	Standard	61 A	EMIPAK-1B	1200 V	EMIPAK-1B	Chassis Mount	230 µA	3.34 nF	Three Level Inverter	Trench	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT Module Trench Three Level Inverter 1200 V 61 A 216 W Chassis Mount EMIPAK-1B

Technical documentation and resources