Discrete Semiconductor Products

SIA450DJ-T1-GE3

Obsolete

MOSFET N-CH 240V 1.52A PPAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 240V 1.52A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIA450DJ-T1-GE3

Current - Continuous Drain (Id) @ 25°C	1.52 A
Drain to Source Voltage (Vdss)	240 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	7.04 nC
Input Capacitance (Ciss) (Max) @ Vds	167 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-70-6
Power Dissipation (Max)	15 W, 3.3 W
Rds On (Max) @ Id, Vgs	2.9 Ohm
Supplier Device Package	PowerPAK® SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	FET Type	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SIA450DJ-T1-GE3	Surface Mount	167 pF	PowerPAK® SC-70-6	-55 °C	150 °C	PowerPAK® SC-70-6	1.52 A	7.04 nC	20 V	2.4 V	240 V	3.3 W 15 W	MOSFET (Metal Oxide)	10 V	2.5 V	N-Channel	2.9 Ohm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 240 V 1.52A (Tc) 3.3W (Ta), 15W (Tc) Surface Mount PowerPAK® SC-70-6

Technical documentation and resources

No documents available