Discrete Semiconductor Products

KSC900LBU

Obsolete

TRANS NPN 25V 0.05A TO92-3

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Discrete Semiconductor Products

Obsolete

TRANS NPN 25V 0.05A TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	KSC900LBU

Current - Collector (Ic) (Max) [Max]	50 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	350
Frequency - Transition	100 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	250 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic [Max]	200 mV
Voltage - Collector Emitter Breakdown (Max)	25 V

Part	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature	Transistor Type	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Package / Case	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic [Max]
ON Semiconductor KSC900LBU	25 V	Through Hole	100 MHz	50 mA	350	150 °C	NPN	50 nA	TO-92-3	TO-226-3 TO-92-3	250 mW	200 mV
ON Semiconductor KSC900LBU	25 V	Through Hole	100 MHz	50 mA	350	150 °C	NPN	50 nA	TO-92-3	TO-226-3 TO-92-3	250 mW	200 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 25 V 50 mA 100MHz 250 mW Through Hole TO-92-3

Technical documentation and resources