Discrete Semiconductor Products

MBR60060CTR

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DIODE MODULES SI PWR SCHOTTKY 2TWR 20-100V 600A 60P42R

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Discrete Semiconductor Products

Active

DIODE MODULES SI PWR SCHOTTKY 2TWR 20-100V 600A 60P42R

Technical Specifications

Parameters and characteristics for this part

Specification	MBR60060CTR

Current - Average Rectified (Io) (per Diode)	300 A
Current - Reverse Leakage @ Vr	1 mA
Diode Configuration	1 Pair Common Anode
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Twin Tower
Speed	500 ns, 200 mA
Supplier Device Package	Twin Tower
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	60 V
Voltage - Forward (Vf) (Max) @ If	800 mV

Part	Current - Average Rectified (Io) (per Diode)	Mounting Type	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Speed	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Package / Case	Diode Configuration
GeneSiC Semiconductor MBR60060CTR	300 A	Chassis Mount	1 mA	60 V	Schottky	200 mA 500 ns	-55 °C	150 °C	Twin Tower	800 mV	Twin Tower	1 Pair Common Anode

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	80	$ 107.87
	N/A	0	$ 111.80
		20	$ 89.44
Mouser	N/A	40	$ 107.86

General part information

Diode Array 1 Pair Common Anode 60 V 300A Chassis Mount Twin Tower

Technical documentation and resources