Discrete Semiconductor Products

GI752-E3/73

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DIODE GEN PURP 200V 6A P600

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Discrete Semiconductor Products

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DIODE GEN PURP 200V 6A P600

Technical Specifications

Parameters and characteristics for this part

Specification	GI752-E3/73

Capacitance @ Vr, F	150 pF
Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-50 °C
Package / Case	P600, Axial
Reverse Recovery Time (trr)	2.5 µs
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	P600
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If [Max]	900 mV

Part	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Capacitance @ Vr, F	Technology	Current - Average Rectified (Io)	Speed	Speed	Current - Reverse Leakage @ Vr	Mounting Type	Reverse Recovery Time (trr)	Package / Case	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]
Vishay General Semiconductor - Diodes Division GI752-E3/54	900 mV	200 V	P600	150 pF	Standard	6 A	Standard Recovery >500ns	200 mA	5 µA	Through Hole	2.5 µs	P600 Axial	-50 °C	150 °C
Vishay General Semiconductor - Diodes Division GI752-E3/73	900 mV	200 V	P600	150 pF	Standard	6 A	Standard Recovery >500ns	200 mA	5 µA	Through Hole	2.5 µs	P600 Axial	-50 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 200 V 6A Through Hole P600

Technical documentation and resources