Discrete Semiconductor Products

GC02MPS12-220

Obsolete

DIODE: SCHOTTKY RECTIFYING; SIC; THT; 1.2KV; 2A; TO220-2; TUBE

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Discrete Semiconductor Products

Obsolete

DIODE: SCHOTTKY RECTIFYING; SIC; THT; 1.2KV; 2A; TO220-2; TUBE

Technical Specifications

Parameters and characteristics for this part

Specification	GC02MPS12-220

Capacitance @ Vr, F	127 pF
Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	2 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-220-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	2 A
Voltage - Forward (Vf) (Max) @ If [Max]	1.8 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Mounting Type	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - Forward (Vf) (Max) @ If	Technology	Supplier Device Package	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Reverse Recovery Time (trr)
GeneSiC Semiconductor GC02MPS12-220	175 ░C	-55 °C	TO-220-2	Through Hole	127 pF	1.8 V	2 A	SiC (Silicon Carbide) Schottky	TO-220-2	500 mA	1.2 kV	2 µA	12 A	0 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 12A Through Hole TO-220-2

Technical documentation and resources