Discrete Semiconductor Products

PNS40010ER,115

LTB

DIODE GEN PURP 400V 1A SOD123W

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Discrete Semiconductor Products

LTB

DIODE GEN PURP 400V 1A SOD123W

Technical Specifications

Parameters and characteristics for this part

Specification	PNS40010ER,115

Capacitance @ Vr, F	20 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	1 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 °C
Package / Case	SOD-123W
Qualification	AEC-Q101
Reverse Recovery Time (trr)	1.8 µs
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	SOD-123W
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Grade	Operating Temperature - Junction [Max]	Mounting Type	Capacitance @ Vr, F	Technology	Package / Case	Supplier Device Package	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Qualification	Speed	Speed
Freescale Semiconductor - NXP PNS40010ER,115	1.1 V	1.8 µs	400 V	Automotive	175 °C	Surface Mount	20 pF	Standard	SOD-123W	SOD-123W	1 A	1 µA	AEC-Q101	Standard Recovery >500ns	200 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 400 V 1A Surface Mount SOD-123W

Technical documentation and resources