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Technical Specifications
Parameters and characteristics for this part
| Specification | RCX081N20 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 8 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 8.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 330 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 2.23 W, 40 W |
| Rds On (Max) @ Id, Vgs | 770 mOhm |
| Supplier Device Package | TO-220FM |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5.25 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 1 | $ 1.07 | |
| 10 | $ 0.88 | |||
| 100 | $ 0.68 | |||
| 500 | $ 0.58 | |||
| 1000 | $ 0.47 | |||
| 2000 | $ 0.44 | |||
| 5000 | $ 0.42 | |||
| 10000 | $ 0.40 | |||
Description
General part information
RCX081N20 Series
10V Drive Nch Power MOSFET
Documents
Technical documentation and resources