Discrete Semiconductor Products

SIA533EDJ-T1-GE3

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MOSFET N/P-CH 12V 4.5A SC70-6

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Discrete Semiconductor Products

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MOSFET N/P-CH 12V 4.5A SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIA533EDJ-T1-GE3

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	12 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	15 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	420 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-70-6 Dual
Power - Max [Max]	7.8 W
Rds On (Max) @ Id, Vgs	34 mOhm
Supplier Device Package	PowerPAK® SC-70-6 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	FET Feature	Package / Case	Technology	Configuration	Power - Max [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]
Vishay General Semiconductor - Diodes Division SIA533EDJ-T1-GE3	34 mOhm	15 nC	Logic Level Gate	PowerPAK® SC-70-6 Dual	MOSFET (Metal Oxide)	N and P-Channel	7.8 W	12 V	PowerPAK® SC-70-6 Dual	1 V	4.5 A	-55 °C	150 °C	Surface Mount	420 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 12V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual

Technical documentation and resources