Discrete Semiconductor Products

PHB176NQ04T,118

Obsolete

MOSFET N-CH 40V 75A D2PAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 40V 75A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	PHB176NQ04T,118

Current - Continuous Drain (Id) (Tc)	75 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	68.9 nC
Input Capacitance (Ciss) (Max)	3620 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	D2PAK
Power Dissipation (Max)	250 W
Rds On (Max)	4.3 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

Part	Current - Continuous Drain (Id) (Tc)	Power Dissipation (Max)	Rds On (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	FET Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Technology	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Package Name	Gate Charge (Max)	Vgs(th) (Max)
NXP USA Inc. PHB176NQ04T,118	75 A	250 W	4.3 mOhm	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	40 V	20 V	MOSFET (Metal Oxide)	Surface Mount	-55 °C	175 °C	3620 pF	D2PAK	68.9 nC	4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 40 V 75A (Tc) 250W (Tc) Surface Mount D2PAK

Technical documentation and resources