Discrete Semiconductor Products

PHB176NQ04T,118

Obsolete

MOSFET N-CH 40V 75A D2PAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 40V 75A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	PHB176NQ04T,118

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	68.9 nC
Input Capacitance (Ciss) (Max) @ Vds	3620 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	250 W
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Power Dissipation (Max) [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]
Freescale Semiconductor - NXP PHB176NQ04T,118	40 V	N-Channel	20 V	75 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3620 pF	10 V	MOSFET (Metal Oxide)	68.9 nC	Surface Mount	250 W	D2PAK	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 40 V 75A (Tc) 250W (Tc) Surface Mount D2PAK

Technical documentation and resources