Discrete Semiconductor Products

IXFA110N15T2-TRL

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MOSFET N-CH 150V 110A TO263

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Discrete Semiconductor Products

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MOSFET N-CH 150V 110A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	IXFA110N15T2-TRL

Current - Continuous Drain (Id) @ 25°C	110 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	150 nC
Input Capacitance (Ciss) (Max) @ Vds	8600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	480 W
Rds On (Max) @ Id, Vgs	13 mOhm
Supplier Device Package	TO-263AA (IXFA)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Technology	FET Type	Power Dissipation (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type
Littelfuse/Commercial Vehicle Products IXFA110N15T2-TRL	150 V	13 mOhm	8600 pF	MOSFET (Metal Oxide)	N-Channel	480 W	TO-263AA (IXFA)	150 nC	20 V	4.5 V	110 A	10 V	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount

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General part information

N-Channel 150 V 110A (Tc) 480W (Tc) Surface Mount TO-263AA (IXFA)

Technical documentation and resources