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AG502ELD3HRBTL

Discrete Semiconductor Products

AG502ELD3HRBTL

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Rohm Semiconductor

MOSFETS PCH -60V -48A, TO-252 (DPAK), POWER MOSFET FOR AUTOMOTIVE

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Search across all available documentation for this part.

DocumentsAG502ELD3HRBTL | Datasheet AG502ELD3HRB ESD Data +40

AG502ELD3HRBTL

Discrete Semiconductor Products

AG502ELD3HRBTL

Active

Rohm Semiconductor

MOSFETS PCH -60V -48A, TO-252 (DPAK), POWER MOSFET FOR AUTOMOTIVE

Deep-Dive with AI

DocumentsAG502ELD3HRBTL | Datasheet AG502ELD3HRB ESD Data +40

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	AG502ELD3HRBTL

Current - Continuous Drain (Id) @ 25°C	48 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	48 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2450 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	77 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	5 V, -20 V
Vgs(th) (Max) @ Id	2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	2495	$ 2.25
Mouser	N/A	1	$ 1.77
		10	$ 1.20
		100	$ 0.95
		500	$ 0.79
		1000	$ 0.69
		2500	$ 0.66
		5000	$ 0.64
		10000	$ 0.63
Newark	Each (Supplied on Cut Tape)	1	$ 2.34
		10	$ 1.50
		25	$ 1.34
		50	$ 1.18
		100	$ 1.02
		250	$ 0.92
		500	$ 0.81
		1000	$ 0.75

Description

General part information

AG502ELD3HRB Series

AG502ELD3HRB is an automotive grade MOSFET that is AEC-Q101 qualified. Ideal for Automotive Systems

Documents

Technical documentation and resources

AG502ELD3HRBTL | Datasheet

AG502ELD3HRB ESD Data

Characteristics Data

What Is Thermal Design

Temperature derating method for Safe Operating Area (SOA)

Schematic Design & Verification

Explanation for Marking

Package Information

Basics of Thermal Resistance and Heat Dissipation

Notes for Temperature Measurement Using Thermocouples

Package Dimensions

Package Information

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Judgment Criteria of Thermal Evaluation

Moisture Sensitivity Level - Transistors

Package Information

MOSFET Gate Resistor Setting for Motor Driving

Technical Article

Report of SVHC under REACH Regulation

Environmental Data

List of Transistor Package Thermal Resistance

How to Use LTspice® Models

Schematic Design & Verification

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Condition of Soldering / Land Pattern Reference

Package Information

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Method for Monitoring Switching Waveform

Schematic Design & Verification

TO-252_TL Taping Information

Package Information

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Two-Resistor Model for Thermal Simulation

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Report of SVHC under REACH Regulation

Environmental Data

How to Use the Thermal Resistance and Thermal Characteristics Parameters

MOSFET Gate Drive Current Setting for Motor Driving

Technical Article

Measurement Method and Usage of Thermal Resistance RthJC

Types and Features of Transistors

Application Note

Part Explanation

Application Note

About Flammability of Materials

Environmental Data

Notes for Calculating Power Consumption:Static Operation

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

Precautions When Measuring the Rear of the Package with a Thermocouple

PCB Layout Thermal Design Guide

About Export Regulations

Export Information

What is a Thermal Model? (Transistor)

Notes for Temperature Measurement Using Forward Voltage of PN Junction

Anti-Whisker formation - Transistors

Package Information

θ<sub>JC</sub> and Ψ<sub>JT</sub>

Compliance of the RoHS directive

Environmental Data

AG502ELD3HRB Series

Pch -60V -48A, TO-252 (DPAK), Power MOSFET for Automotive

Part	Grade	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Package / Case	FET Type	Technology	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Supplier Device Package	Qualification	Operating Temperature	Vgs (Max) [Max]	Mounting Type	Power Dissipation (Max)
Rohm Semiconductor AG502ELD3HRBTL	Automotive	30 mOhm	4.5 V 10 V	48 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	P-Channel	MOSFET (Metal Oxide)	48 nC	2450 pF	60 V	2.5 V	TO-252	AEC-Q101	175 °C	-20 V 5 V	Surface Mount	77 W