Discrete Semiconductor Products

MUR460-E3/73

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DIODE GEN PURP 600V 4A DO201AD

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Discrete Semiconductor Products

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DIODE GEN PURP 600V 4A DO201AD

Technical Specifications

Parameters and characteristics for this part

Specification	MUR460-E3/73

Current - Average Rectified (Io)	4 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-201AD, Axial
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-201AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.28 V

Part	Mounting Type	Speed	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Supplier Device Package	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If
Vishay General Semiconductor - Diodes Division MUR460-M3/73	Through Hole	200 mA 500 ns	4 A	10 µA	DO-201AD	DO-201AD Axial	600 V	Standard	75 ns	175 ░C	-65 C	1.28 V
Vishay General Semiconductor - Diodes Division MUR460-M3/54	Through Hole	200 mA 500 ns	4 A	10 µA	DO-201AD	DO-201AD Axial	600 V	Standard	75 ns	175 ░C	-65 C	1.28 V
Vishay General Semiconductor - Diodes Division MUR460-E3/73	Through Hole	200 mA 500 ns	4 A	10 µA	DO-201AD	DO-201AD Axial	600 V	Standard	75 ns	175 ░C	-65 C	1.28 V
Vishay General Semiconductor - Diodes Division MUR460-E3/54	Through Hole	200 mA 500 ns	4 A	10 µA	DO-201AD	DO-201AD Axial	600 V	Standard	75 ns	175 ░C	-65 C	1.28 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 4A Through Hole DO-201AD

Technical documentation and resources