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SOT1023
Discrete Semiconductor Products

PSMNR51-25YLHX

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Nexperia USA Inc.

N-CHANNEL 25 V, 0.57 MΩ, 380 A LOGIC LEVEL MOSFET IN LFPAK56E USING NEXTPOWERS3 TECHNOLOGY

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SOT1023
Discrete Semiconductor Products

PSMNR51-25YLHX

Active
Nexperia USA Inc.

N-CHANNEL 25 V, 0.57 MΩ, 380 A LOGIC LEVEL MOSFET IN LFPAK56E USING NEXTPOWERS3 TECHNOLOGY

Technical Specifications

Parameters and characteristics for this part

SpecificationPSMNR51-25YLHX
Current - Continuous Drain (Id) @ 25°C380 A
Drain to Source Voltage (Vdss)25 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]113 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]6990 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-1023, 4-LFPAK
Power Dissipation (Max)333 W
Rds On (Max) @ Id, Vgs0.57 mOhm
Supplier Device PackageLFPAK56, Power-SO8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.13
10$ 2.63
100$ 2.13
500$ 1.89
Digi-Reel® 1$ 3.13
10$ 2.63
100$ 2.13
500$ 1.89
N/A 1382$ 5.41
Tape & Reel (TR) 1500$ 1.51

Description

General part information

PSMNR51-25YLH Series

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56E package optimized for low RDSon, low IDSSleakage even when hot, high efficiency and high current. Rated to 380 A, optimized for DC load switch and hot-swap applications.