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HGT1S12N60C3
Discrete Semiconductor Products

FDU6N25

Active
ON Semiconductor

POWER MOSFET, N-CHANNEL, UNIFET<SUP>TM</SUP>, 250 V, 4.4 A, 1.1 Ω, IPAK

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HGT1S12N60C3
Discrete Semiconductor Products

FDU6N25

Active
ON Semiconductor

POWER MOSFET, N-CHANNEL, UNIFET<SUP>TM</SUP>, 250 V, 4.4 A, 1.1 Ω, IPAK

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationFDU6N25
Current - Continuous Drain (Id) @ 25°C4.4 A
Drain to Source Voltage (Vdss)250 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs6 nC
Input Capacitance (Ciss) (Max) @ Vds250 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-251-3 Stub Leads, IPAK
Power Dissipation (Max) [Max]50 W
Rds On (Max) @ Id, Vgs1.1 Ohm
Supplier Device PackageIPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 1211$ 0.25

Description

General part information

FDU6N25 Series

UniFETTMMOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Documents

Technical documentation and resources