Discrete Semiconductor Products

NTLGF3501NT2G

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TRANS MOSFET N-CH 20V 3.4A 6-PIN DFN EP T/R

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Discrete Semiconductor Products

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TRANS MOSFET N-CH 20V 3.4A 6-PIN DFN EP T/R

Technical Specifications

Parameters and characteristics for this part

Specification	NTLGF3501NT2G

Current - Continuous Drain (Id) @ 25°C	2.8 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Input Capacitance (Ciss) (Max) @ Vds	275 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-VDFN Exposed Pad
Power Dissipation (Max)	1.14 W
Rds On (Max) @ Id, Vgs	90 mOhm
Supplier Device Package	6-DFN (3x3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	2 V

Part	Vgs (Max)	Mounting Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Supplier Device Package	Package / Case	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)
ON Semiconductor NTLGF3501NT2G	12 V	Surface Mount	1.14 W	10 nC	MOSFET (Metal Oxide)	2 V	90 mOhm	6-DFN (3x3)	6-VDFN Exposed Pad	2.8 A	N-Channel	275 pF	2.5 V 4.5 V	-55 °C	150 °C	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 20 V 2.8A (Ta) 1.14W (Ta) Surface Mount 6-DFN (3x3)

Technical documentation and resources