Specification	EMH2418R-TL-H

Configuration	2 N-Channel (Dual) Common Drain
Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	24 V
FET Feature	Logic Level Gate
FET Feature	2.5 V
Gate Charge (Qg) (Max) @ Vgs [Max]	4.4 nC
Mounting Type	Surface Mount
Operating Temperature	150 °C
Rds On (Max) @ Id, Vgs [Max]	15 mOhm
Supplier Device Package	SOT-383FL, EMH8
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.3 V

EMH2418R Series

Dual N-Channel Power MOSFET, 24V, 9A, 15mΩ

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	FET Feature	FET Feature	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature	Vgs(th) (Max) @ Id	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Technology
ON Semiconductor EMH2418R-TL-H	4.4 nC	2 N-Channel (Dual) Common Drain	Logic Level Gate	2.5 V	9 A	15 mOhm	150 °C	1.3 V	Surface Mount	24 V	EMH8 SOT-383FL	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

EMH2418R is N-Channel Power MOSFET, 24V, 9A, 15mΩ, Dual EMH8.

Technical documentation and resources