Specification	NTD4960N-35G

Current - Continuous Drain (Id) @ 25°C	8.9 A, 55 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Input Capacitance (Ciss) (Max) @ Vds	1300 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Stub Leads, IPAK
Power Dissipation (Max)	35.71 W, 1.07 W
Rds On (Max) @ Id, Vgs	8 mOhm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

NTD4906N Series

Power MOSFET 30V 54A 5.5 mOhm Single N-Channel DPAK

Part	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id
ON Semiconductor NTD4909N-35G	8 mOhm	20 V	30 V	Through Hole	1.37 W 29.4 W	IPAK	-55 °C	175 ░C	2.2 V	1314 pF	N-Channel	MOSFET (Metal Oxide)	4.5 V 10 V	17.5 nC	TO-251-3 Stub Leads IPAK	8.8 A 41 A
ON Semiconductor NTD4906N-35G	5.5 mOhm	20 V	30 V	Through Hole	1.38 W 37.5 W	IPAK	-55 °C	175 ░C	2.2 V	1932 pF	N-Channel	MOSFET (Metal Oxide)	4.5 V 10 V	24 nC	TO-251-3 Stub Leads IPAK	10.3 A	54 A
ON Semiconductor NTD4904N-35G	3.7 mOhm	20 V	30 V	Through Hole	1.4 W 52 W	IPAK	-55 °C	175 ░C	2.2 V	3052 pF	N-Channel	MOSFET (Metal Oxide)	4.5 V 10 V	41 nC	TO-251-3 Stub Leads IPAK	13 A 79 A
ON Semiconductor NTD4909NT4G	8 mOhm	20 V	30 V	Surface Mount	1.37 W 29.4 W	DPAK	-55 °C	175 ░C	2.2 V	1314 pF	N-Channel	MOSFET (Metal Oxide)	4.5 V 10 V	17.5 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	8.8 A 41 A
ON Semiconductor NTD4909NA-35G	8 mOhm		30 V	Through Hole		IPAK			2.2 V	1314 pF	N-Channel	MOSFET (Metal Oxide)		17.5 nC	TO-251-3 Stub Leads IPAK	8.8 A 41 A
ON Semiconductor NTD4970N-1G	11 mOhm		30 V	Through Hole		IPAK					N-Channel	MOSFET (Metal Oxide)			IPAK TO-251-3 Short Leads TO-251AA	8.5 A 36 A		774 pF	2.5 V
ON Semiconductor NTD4979NT4G	9 mOhm	20 V	30 V	Surface Mount	1.38 W 26.3 W	DPAK	-55 °C	175 ░C		837 pF	N-Channel	MOSFET (Metal Oxide)	4.5 V 10 V	16.5 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	9.4 A 41 A			2.5 V
ON Semiconductor NTD4960N-35G	8 mOhm	20 V	30 V	Through Hole	1.07 W 35.71 W	IPAK	-55 °C	175 ░C		1300 pF	N-Channel	MOSFET (Metal Oxide)	4.5 V 10 V	22 nC	TO-251-3 Stub Leads IPAK	8.9 A 55 A			2.5 V
ON Semiconductor NTD4905NT4G	4.5 mOhm	20 V	30 V	Surface Mount	1.4 W 44 W	DPAK	-55 °C	175 ░C	2.2 V		N-Channel	MOSFET (Metal Oxide)	4.5 V 10 V		DPAK (2 Leads + Tab) SC-63 TO-252-3	12 A 67 A		2340 pF
ON Semiconductor NTD4906NA-35G	5.5 mOhm		30 V	Through Hole		IPAK			2.2 V	1932 pF	N-Channel	MOSFET (Metal Oxide)		24 nC	TO-251-3 Stub Leads IPAK	10.3 A	54 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NTD4906N Series

Power MOSFET, 30 V, 36 A, Single N Channel, DPAK/IPAK

Documents

Technical documentation and resources

Datasheet

Package Drawing-369AD-3.5 mm IPAK, Straight Lead

Package Drawing