Discrete Semiconductor Products
HP8KE6TB1
ActiveRohm Semiconductor
DUAL MOSFET, N-CH, 100V, 17A, HSOP ROHS COMPLIANT: YES
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Discrete Semiconductor Products
HP8KE6TB1
ActiveRohm Semiconductor
DUAL MOSFET, N-CH, 100V, 17A, HSOP ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | HP8KE6TB1 |
|---|---|
| Configuration | 2 N-Channel, 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 6 A, 17 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.7 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 305 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-PowerTDFN |
| Power - Max | 3 W, 21 W |
| Rds On (Max) @ Id, Vgs | 54 mOhm |
| Supplier Device Package | 8-HSOP |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
HP8KE6 Series
HP8KE6 is a low on-resistance MOSFET ideal for switching applications.
Documents
Technical documentation and resources