Discrete Semiconductor Products

PMPB12UNEAX

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MOSFET N-CH 20V 7.9A DFN2020MD-6

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Discrete Semiconductor Products

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MOSFET N-CH 20V 7.9A DFN2020MD-6

Technical Specifications

Parameters and characteristics for this part

Specification	PMPB12UNEAX

Current - Continuous Drain (Id) @ 25°C	7.9 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1220 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max)	1.6 W, 12.5 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	18 mOhm
Supplier Device Package	DFN2020MD-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	900 mV

Part	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	FET Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Technology	Power Dissipation (Max) [Max]	Power Dissipation (Max)	Grade	Qualification
Freescale Semiconductor - NXP PMPB12UNEX	1.8 V 4.5 V	DFN2020MD-6	N-Channel	16 mOhm	11.4 A	1220 pF	Surface Mount	900 mV	20 V	6-UDFN Exposed Pad	-55 °C	150 °C	12 V	17 nC	MOSFET (Metal Oxide)	470 mW
Freescale Semiconductor - NXP PMPB12EPX	4.5 V 10 V	DFN2020MD-6	P-Channel	17.3 mOhm	7.9 A	227 pF	Surface Mount	2 V	30 V	6-UDFN Exposed Pad	-55 °C	150 °C	20 V	39.9 nC	MOSFET (Metal Oxide)		1.7 W 13 W
Freescale Semiconductor - NXP PMPB12UNEAX	1.8 V 4.5 V	DFN2020MD-6	N-Channel	18 mOhm	7.9 A	1220 pF	Surface Mount	900 mV	20 V	6-UDFN Exposed Pad	-55 °C	150 °C	12 V	17 nC	MOSFET (Metal Oxide)		1.6 W 12.5 W	Automotive	AEC-Q101

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General part information

N-Channel 20 V 7.9A (Ta) 1.6W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6

Technical documentation and resources