Discrete Semiconductor Products

IRFL214TRPBF-BE3

LTB

MOSFET N-CH 250V 790MA SOT223

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Discrete Semiconductor Products

LTB

MOSFET N-CH 250V 790MA SOT223

Technical Specifications

Parameters and characteristics for this part

Specification	IRFL214TRPBF-BE3

Current - Continuous Drain (Id) @ 25°C	790 mA
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8.2 nC
Input Capacitance (Ciss) (Max) @ Vds	140 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	3.1 W, 2 W
Rds On (Max) @ Id, Vgs	2 Ohm
Supplier Device Package	SOT-223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology
Vishay General Semiconductor - Diodes Division IRFL214TRPBF-BE3	250 V	2 W 3.1 W	20 V	8.2 nC	Surface Mount	140 pF	4 V	2 Ohm	N-Channel	790 mA	TO-261-4 TO-261AA	SOT-223	-55 °C	150 °C	10 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 250 V 790mA (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223

Technical documentation and resources