Discrete Semiconductor Products

VS-70HFL60S02

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DIODE GEN PURP 600V 70A DO203AB

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Discrete Semiconductor Products

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DIODE GEN PURP 600V 70A DO203AB

Technical Specifications

Parameters and characteristics for this part

Specification	VS-70HFL60S02

Current - Average Rectified (Io)	70 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	DO-203AB, DO-5, Stud
Reverse Recovery Time (trr)	200 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-5
Supplier Device Package	DO-203AB
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.85 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Supplier Device Package	Mounting Type	Technology	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Speed	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr
Vishay General Semiconductor - Diodes Division VS-70HFL60S02M	125 °C	-40 °C	DO-5	DO-203AB	Chassis Stud Mount	Standard	200 ns	1.85 V	600 V	DO-203AB DO-5 Stud	200 mA 500 ns	70 A
Vishay General Semiconductor - Diodes Division VS-70HFL60S02	125 °C	-40 °C	DO-5	DO-203AB	Chassis Stud Mount	Standard	200 ns	1.85 V	600 V	DO-203AB DO-5 Stud	200 mA 500 ns	70 A	100 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 70A Chassis, Stud Mount DO-203AB (DO-5)

Technical documentation and resources