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RQ3E120ATTB

Discrete Semiconductor Products

RH6E040BGTB1

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Rohm Semiconductor

MOSFET, N-CHANNEL, 30V, 125A, HSMT ROHS COMPLIANT: YES

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Search across all available documentation for this part.

DocumentsDatasheet Importance of Probe Calibration When Measuring Power: Deskew +22

RQ3E120ATTB

Discrete Semiconductor Products

RH6E040BGTB1

Active

Rohm Semiconductor

MOSFET, N-CHANNEL, 30V, 125A, HSMT ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsDatasheet Importance of Probe Calibration When Measuring Power: Deskew +22

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RH6E040BGTB1

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	2300 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	2 W, 78 W
Rds On (Max) @ Id, Vgs	2.9 mOhm
Supplier Device Package	8-HSMT (3.2x3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.32
		10	$ 1.49
		25	$ 1.27
		100	$ 1.02
		250	$ 0.90
		500	$ 0.83
		1000	$ 0.77
	Digi-Reel®	1	$ 2.32
		10	$ 1.49
		25	$ 1.27
		100	$ 1.02
		250	$ 0.90
		500	$ 0.83
		1000	$ 0.77
	Tape & Reel (TR)	3000	$ 0.69
		6000	$ 0.66
		9000	$ 0.64
		15000	$ 0.62
Newark	Each (Supplied on Cut Tape)	1	$ 1.67
		10	$ 1.37
		25	$ 1.27
		50	$ 1.18
		100	$ 1.07
		250	$ 0.99
		500	$ 0.91
		1000	$ 0.74

Description

General part information

RH6E040BG Series

RH6E040BG is a power MOSFET with low-on resistance and High power small mold package, suitable for switching, motor drives and DC/DC converter.

Documents

Technical documentation and resources

Datasheet

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

List of Transistor Package Thermal Resistance

Notes for Temperature Measurement Using Thermocouples

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Measurement Method and Usage of Thermal Resistance RthJC

About Flammability of Materials

Environmental Data

What is a Thermal Model? (Transistor)

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

HSMT8(TB1) Taping Information

Package Information

Moisture Sensitivity Level - Transistors

Package Information

Part Explanation

Application Note

PCB Layout Thermal Design Guide

Types and Features of Transistors

Application Note

Temperature derating method for Safe Operating Area (SOA)

Schematic Design & Verification

Condition of Soldering / Land Pattern Reference

Package Information

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Two-Resistor Model for Thermal Simulation

Method for Monitoring Switching Waveform

Schematic Design & Verification

HSMT8(TB1) Explanation for Marking

Package Information

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

What Is Thermal Design

About Export Regulations

Export Information

MOSFET Gate Drive Current Setting for Motor Driving

Technical Article

RH6E040BG Series

Nch 30V 125A, HSMT8, Power MOSFET

Part	Vgs(th) (Max) @ Id [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Technology	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Supplier Device Package
Rohm Semiconductor RH6E040BGTB1	2.5 V	2.9 mOhm	30 V	Surface Mount	150 °C	20 V	30 nC	MOSFET (Metal Oxide)	8-PowerVDFN	4.5 V 10 V	2 W 78 W	2300 pF	N-Channel	8-HSMT (3.2x3)