Specification	NVTYS029N08HTWG

Current - Continuous Drain (Id) @ 25°C	6.4 A, 21 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.3 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	369 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-LFPAK56, SOT-1205
Power Dissipation (Max)	33 W, 3.1 W
Qualification	AEC-Q101
Supplier Device Package	8-LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

NVTYS029N08H Series

MOSFET – Power, Single, N-Channel,

Part	Grade	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Technology	Vgs(th) (Max) @ Id	Qualification	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type
ON Semiconductor NVTYS029N08HTWG	Automotive	-55 °C	175 ░C	6.3 nC	20 V	369 pF	8-LFPAK56 SOT-1205	6.4 A 21 A	10 V	N-Channel	MOSFET (Metal Oxide)	4 V	AEC-Q101	3.1 W 33 W	80 V	8-LFPAK	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFET – Power, Single, N-Channel, 80 V, 21 A, 32.4 mΩ

Technical documentation and resources