
IXTT11P50
ActiveDISC MOSFET P CHANNEL-STD TO-268AA/ TUBE

IXTT11P50
ActiveDISC MOSFET P CHANNEL-STD TO-268AA/ TUBE
Technical Specifications
Parameters and characteristics for this part
| Specification | IXTT11P50 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 11 A |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 130 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 4700 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D3PAK (2 Leads + Tab), TO-268AA, TO-268-3 |
| Power Dissipation (Max) [Max] | 300 W |
| Rds On (Max) @ Id, Vgs | 750 mOhm |
| Supplier Device Package | TO-268AA |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IXTT11P50 Series
P-Channel Standard Power MOSFETs are available in voltage rating from -100V to -600V in industry-popular TO-247 and surface mountable TO-268 packages. They are ideal for Buck Converters and for loads that need to be connected to ground. They can pair-up with equivalent N-Channel MOSFETs to form a complementary pair for a number of applications requiring Totem Pole outputs. Advantages: High power density Easy to mount Space savings
Documents
Technical documentation and resources