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MT29RZ4B2DZZHGSK-18 W.80E TR
Integrated Circuits (ICs)

MT29RZ4B2DZZHGSK-18 W.80E TR

Obsolete
Micron Technology Inc.

IC FLASH RAM 4GBIT PAR 162VFBGA

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MT29RZ4B2DZZHGSK-18 W.80E TR
Integrated Circuits (ICs)

MT29RZ4B2DZZHGSK-18 W.80E TR

Obsolete
Micron Technology Inc.

IC FLASH RAM 4GBIT PAR 162VFBGA

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMT29RZ4B2DZZHGSK-18 W.80E TR
Clock Frequency533 MHz
Memory FormatFLASH, RAM
Memory InterfaceParallel
Memory Organization64M x 32 (LPDDR2), 512M x 8 (NAND)
Memory Size2 Gbit, 4 Gbit
Memory TypeVolatile, Non-Volatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 °C
Operating Temperature [Min]-25 °C
Supplier Device Package162-VFBGA
Supplier Device Package [x]11.5
Supplier Device Package [y]13
TechnologyFLASH - NAND, DRAM - LPDDR2
Voltage - Supply1.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 6.29

Description

General part information

MT29RZ4B2 Series

FLASH - NAND, DRAM - LPDDR2 Memory IC 4Gbit (NAND), 2Gbit (LPDDR2) Parallel 533 MHz 162-VFBGA (11.5x13)

Documents

Technical documentation and resources

No documents available