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Discrete Semiconductor Products

IXFK64N60P3

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Littelfuse/Commercial Vehicle Products

TRANS MOSFET N-CH 600V 64A 3-PIN(3+TAB) TO-264

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TO-264
Discrete Semiconductor Products

IXFK64N60P3

Active
Littelfuse/Commercial Vehicle Products

TRANS MOSFET N-CH 600V 64A 3-PIN(3+TAB) TO-264

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIXFK64N60P3
Current - Continuous Drain (Id) @ 25°C64 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]145 nC
Input Capacitance (Ciss) (Max) @ Vds9900 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-264AA, TO-264-3
Power Dissipation (Max)1130 W
Rds On (Max) @ Id, Vgs95 mOhm
Supplier Device PackageTO-264AA (IXFK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 15.28
25$ 12.37
100$ 11.65
500$ 10.55
1000$ 9.68
NewarkEach 250$ 10.16
500$ 9.44

Description

General part information

IXFK64N60Q3 Series

The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. Available with drain-to-source voltage ratings of 200V–1000V and drain current ratings of 10A–100A, the Q3-Class series features an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), resulting in a substantial reduction in both the conduction and switching loss of the device. Power switching capabilities and device ruggedness are further enhanced through the utilization of our proven HiPerFETTM process, yielding a device with a fast intrinsic rectifier which provides for low reverse recovery charge (Qrr) while enhancing the commutating dV/dt ratings (up to 50V/ns) of the device. Advantages: Easy to Mount High Power Density Space savings

Documents

Technical documentation and resources