Specification	KSC2331YTA

Current - Collector (Ic) (Max) [Max]	700 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	50 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-92-3 Long Body, Formed Leads, TO-226-3
Power - Max [Max]	1 W
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	700 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

KSC2331 Series

NPN Epitaxial Silicon Transistor

Part	Current - Collector Cutoff (Max) [Max]	Transistor Type	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Mounting Type	Power - Max [Max]	Frequency - Transition	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max)
ON Semiconductor KSC2331YTA	100 nA	NPN	700 mA	TO-92-3	Through Hole	1 W	50 MHz	150 °C	120	Formed Leads TO-226-3 TO-92-3 Long Body	700 mV	60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

NPN Epitaxial Silicon Transistor

Technical documentation and resources