Discrete Semiconductor Products

RJK0603DPN-E0#T2

Obsolete

NCH SINGLE POWER MOSFET 60V 80A 5.2MOHM TO-220AB

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Discrete Semiconductor Products

Obsolete

NCH SINGLE POWER MOSFET 60V 80A 5.2MOHM TO-220AB

Technical Specifications

Parameters and characteristics for this part

Specification	RJK0603DPN-E0#T2

Current - Continuous Drain (Id) @ 25°C	80 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	57 nC
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	5.2 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Nch Single Power Mosfet 60V 80A 5.2Mohm To-220Ab

Part	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max)	Technology	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)
Renesas Electronics Corporation RJK0603DPN-E0#T2	57 nC	Through Hole	5.2 mOhm	TO-220AB	80 A	N-Channel	20 V	60 V	TO-220-3	125 W	MOSFET (Metal Oxide)	150 °C	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

The RJK0603DPN-E0 is a Nch Single Power Mosfet 60V 80A 5.2Mohm To-220Ab.

Technical documentation and resources