IXFN170N30P
ActiveDISCMSFT N-CH HIPERFET-POLASOT-227B(MINI/ TUBE
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IXFN170N30P
ActiveDISCMSFT N-CH HIPERFET-POLASOT-227B(MINI/ TUBE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IXFN170N30P |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 138 A |
| Drain to Source Voltage (Vdss) | 300 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 258 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 20000 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-227-4, miniBLOC |
| Power Dissipation (Max) | 890 W |
| Rds On (Max) @ Id, Vgs | 18 mOhm |
| Supplier Device Package | SOT-227B |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IXFN170N30P Series
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on), low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings
Documents
Technical documentation and resources